Strain‐Engineered Ultrahigh Mobility in Phosphorene for Terahertz Transistors

Few-layer Phosphorene: An Ideal 2D Material For Tunnel Transistors

2D transition metal dichalcogenides (TMDs) have attracted a lot of attention recently for energy-efficient tunneling-field-effect transistor (TFET) applications due to their excellent gate control resulting from their atomically thin dimensions. However, most TMDs have bandgaps (Eg) and effective masses (m(*)) outside the optimum range needed for high performance. It is shown here that the newl...

Ultrahigh mobility and efficient charge injection in monolayer organic thin-film transistors on boron nitride

Organic thin-film transistors (OTFTs) with high mobility and low contact resistance have been actively pursued as building blocks for low-cost organic electronics. In conventional solution-processed or vacuum-deposited OTFTs, due to interfacial defects and traps, the organic film has to reach a certain thickness for efficient charge transport. Using an ultimate monolayer of 2,7-dioctyl[1]benzot...

Toward air-stable multilayer phosphorene thin-films and transistors

Few-layer black phosphorus (BP), also known as phosphorene, is poised to be the most attractive graphene analogue owing to its high mobility approaching that of graphene, and its thickness-tunable band gap that can be as large as that of molybdenum disulfide. In essence, phosphorene represents the much sought after high-mobility, large direct band gap two-dimensional layered crystal that is ide...

Terahertz Metamaterials with Ultrahigh Angular Sensitivity

1 wileyonlinelibrary.com C O M M U N IC A IO N for angle of arrival (AoA) measurements [ 34 ] or as directional fi lters to shield detectors or detector arrays from scattered or refl ected light. The remainder of this work is structured as follows: To illustrate the proposed design principle, we will start with optimizing the angular sensitivity of a conventional asymmetric double split ring re...

Helicity sensitive terahertz radiation detection by dual-grating-gate high electron mobility transistors